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2SD25 CZ5388B MT4S104T A110A BUZ74A 525CZ 14CMTC32 LA120X
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5973
DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications
PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg
Collector-base voltage

PARAMETER
CONDITIONS
Collector-emitter voltage
INCH
Base current
Emitter-base voltage
Collector current
ANG
EMIC ES
Open base Open collector TC=25ae
Open emitter
OND
TOR UC
VALUE 120 100 5 15 30 5 150 150 -65~200 ae ae
UNIT V V V A A A W
Collector current-peak
Total Power Dissipation Junction temperature Storage temperature
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5973
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=7A ;IB=0.7A IC=15A; IB=3.75A IC=15A; IB=3.75A VCE=30V; IB=0 VCE=120V; VBE(off)=1.5V TC=150ae VCB=120V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=1.5V IC=15A ; VCE=4V MIN 100 1.0 4.0 2.5 1.0 0.5 5.0 0.5 TYP. MAX UNIT V V V V mA mA mA mA
SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEO ICEV ICBO IEBO hFE-1 hFE-2 fT

HAN INC
SEM GE
OND IC
4 4
25
TOR UC
1.0 75
IC=1A;VCE=10V
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5973
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.10mm)
3


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